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Specialized iNANO Lecture: Growth of silicon carbide and graphene for energy and new approaches

Professor Mikael Syväjärvi, Semiconductor Materials Division, Linköping University, Sweden

Info about event

Time

Monday 19 October 2015,  at 10:15 - 11:00

Location

Teaching room 1593-218, Gustav Wieds Vej 14, 8000 Aarhus C

 

Professor Mikael Syväjärvi, Semiconductor Materials Division, Department of Physics, Chemistry and Biology, Linköping University, Sweden

Growth of silicon carbide and graphene for energy and new approaches

Silicon carbide is commonly studied for transistors. Our group explores alternative approaches in growth and applications. Doped silicon carbide is studied for light emitting or photovoltaic properties for white LED, solar cell, or water splitting to generate hydrogen. Also, we explore graphene grown on silicon carbide, and carbon allotropes on graphene to pave way for new surface or electrode template materials.

Host: Associate Professor Mingdong Dong, iNANO, Aarhus University