The Pegasus is a high through-put inductively coupled plasma (ICP) deep reactive ion etching (DRIE) instrument. It is designed for the “Bosch Process” for high aspect ratio silicon etching. It can etch through a 500 µm thick silicon wafer in just 30 min.
Transfer patterns. Etching of Si, SiO2 and Si3N4.
Ideal sample size: 100 mm wafers.
Processing gasses: C4F8, SF6, O2, H2, CF4.
Processes: Smooth sidewall (roughness < 50 nm), small trench (2-3 µm), and fast etch rate (>15µm/min)
Bjarke Rolighed Jeppesen